国家/地区 China（4）
关键词
出版物
出版时间 2014（4）
机构 HEBEI SEMICOND RES INST（4）
作者 LI J（4）

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

APPLIED PHYSICS LETTERS

YU C, LIU QB, LI J, LU WL, HE ZZ, CAI SJ, FENG ZH

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

CARBON

FENG ZH, YU C, LI J, LIU QB, HE ZZ, SONG XB, WANG JJ, CAI SJ

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH

Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001)

ACTA PHYSICA SINICA

YU C, LI J, LIU QB, CAI SJ, FENG ZH