国家/地区 China（2）
关键词 4HSIC（2）
出版物
出版时间 2015（2）
机构 CHINESE ACAD SCI（2）
作者 LIU XF（2）

Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

MATERIALS

CAI SX, LIU ZH, ZHONG N, LIU SB, LIU XF

Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

NANOMATERIALS

LIU XF, CHEN Y, SUN CZ, GUAN M, ZHANG Y, ZHANG F, SUN GS, ZENG YP