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关键词
出版物 SCIENTIFIC REPORTS（2）
出版时间
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作者 LOGOTETA D（2）

Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

SCIENTIFIC REPORTS

LOGOTETA D, FIORI G, IANNACCONE G

Vertical transport in graphene-hexagonal boron nitride heterostructure devices

SCIENTIFIC REPORTS

BRUZZONE S, LOGOTETA D, FIORI G, LANNACCONE G