国家/地区 England（6）
关键词 GRAPHENE（3） ATOMIC LAYER DEPOSI.（2）
出版物
出版时间 2012（2） 2017（2）
机构 UNIV CAMBRIDGE（6）
作者 MARTIN MB（6）

Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices

APPLIED PHYSICS LETTERS

DI NUZZO D, MIZUTA R, NAKANISHI K, MARTIN MB, ARIA AI, WEATHERUP R, FRIEND RH, HOFMANN S, ALEXANDERWEBBER J

Interdependency of Subsurface Carbon Distribution and Graphene-Catalyst Interaction

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

WEATHERUP RS, AMARA H, BLUME R, DLUBAK B, BAYER BC, DIARRA M, BAHRI M, CABREROVILATELA A, CANEVA S, KIDAMBI PR, MARTIN MB, DERANLOT C, SENEOR P, SCHLOEGL R, DUCASTELLE F, BICHARA C, HOFMANN S

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

ACS NANO

DLUBAK B, MARTIN MB, WEATHERUP RS, YANG H, DERANLOT C, BLUME R, SCHLOEGL R, FERT A, ANANE A, HOFMANN S, SENEOR P, ROBERTSON J

The Parameter Space of Graphene Chemical Vapor Deposition on Polycrystalline Cu

JOURNAL OF PHYSICAL CHEMISTRY C

KIDAMBI PR, DUCATI C, DLUBAK B, GARDINER D, WEATHERUP RS, MARTIN MB, SENEOR P, COLES H, HOFMANN S

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NANOTECHNOLOGY

CABREROVILATELA A, ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, BRAEUNINGERWEIMER P, MARTIN MB, WEATHERUP RS, HOFMANN S

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

2D MATERIALS

ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, VAN VELDHOVEN ZA, BRAEUNINGERWEIMER P, WANG RZ, CABREROVILATELA A, MARTIN MB, SUI JG, CONNOLLY MR, HOFMANN S