国家/地区 Australia（5）
关键词 SIC（5）
出版物 NANOTECHNOLOGY（4）
出版时间 2017（2）
机构 QUEENSLAND U.（4）
作者 MOTTA N（5）

Transfer-Free Synthesis of Lateral Graphene-Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene

ADVANCED MATERIALS INTERFACES

BRADFORD J, SHAFIEI M, MACLEOD J, MOTTA N

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage

NANOTECHNOLOGY

AMJADIPOUR M, MACLEOD J, LIPTONDUFFIN J, IACOPI F, MOTTA N

High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111)

NANOTECHNOLOGY

MONDELLI P, GUPTA B, BETTI MG, MARIANI C, DUFFIN JL, MOTTA N

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

NANOTECHNOLOGY

GUPTA B, DI BERNARDO I, MONDELLI P, DELLA PIA A, BETTI MG, IACOPI F, MARIANI C, MOTTA N

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

NANOTECHNOLOGY

ZEBARDASTAN N, BRADFORD J, LIPTONDUFFIN J, MACLEOD J, OSTRIKOV K, TOMELLINI M, MOTTA N