国家/地区 Iran（2）
关键词 GNRFET（2）
出版物
出版时间
机构 KERMANSHAH U.（2）
作者 NADERI A（2）

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

NADERI A

Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions

JOURNAL OF COMPUTATIONAL ELECTRONICS

NADERI A