国家/地区 Japan（4）
关键词
出版物
出版时间 2014（4）
机构 NIMS（2） NATL INST MA.（2）
作者 NAKAHARAI S（4）

Electrostatically Reversible Polarity of Dual-Gated Graphene Transistors

IEEE TRANSACTIONS ON NANOTECHNOLOGY

NAKAHARAI S, IIJIMA T, OGAWA S, LI SL, TSUKAGOSHI K, SATO S, YOKOYAMA N

Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier

APPLIED PHYSICS EXPRESS

KOMATSU K, KASAI S, LI SL, NAKAHARAI S, MITOMA N, YAMAMOTO M, TSUKAGOSHI K

Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

JOURNAL OF PHYSICS DAPPLIED PHYSICS

TSUKAGOSHI K, LI SL, MIYAZAKI H, APARECIDOFERREIRA A, NAKAHARAI S

Barrier inhomogeneities at vertically stacked graphene-based heterostructures

NANOSCALE

LIN YF, LI WW, LI SL, XU Y, APARECIDOFERREIRA A, KOMATSU K, SUN HB, NAKAHARAI S, TSUKAGOSHI K