国家/地区
关键词 CONTACT RESISTANCE（2）
出版物
出版时间
机构
作者 NEUMAIER D（2）

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

2D MATERIALS

CHAVES FA, JIMENEZ D, SAGADE AA, KIM W, RIIKONEN J, LIPSANEN H, NEUMAIER D