国家/地区 Vietnam（12）
关键词 ELECTRONIC PROPERTI.（8） GRAPHENE（7） SCHOTTKY CONTACT（7）
ELECTRIC FIELD（4） DFT CALCULATION（3） STRAIN（2）
出版物 SUPERLATTICES MICRO.（3）
出版时间 2018（12）
机构 LE QUY DON T.（8） DUY TAN UNIV（3）
作者 NGUYEN CV（12）

Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain

APPLIED PHYSICS LETTERS

PHAM KD, HIEU NN, PHUC HV, FEDOROV IA, DUQUE CA, AMIN B, NGUYEN CV

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

First principles calculations of the geometric structures and electronic properties of van der Waals heterostructure based on graphene, hexagonal boron nitride and molybdenum diselenide

DIAMOND RELATED MATERIALS

PHAM KD, NGUYEN CV

Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like Nanosheet by Strain Engineering

JOURNAL OF ELECTRONIC MATERIALS

PHUC HV, TUAN VV, HIEU NN, ILYASOV VV, FEDOROV IA, HOI BD, PHUONG LTT, HIEU NV, FEDDI E, NGUYEN CV

Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

PHUC HV, HIEU NN, HOI BD, NGUYEN CV

Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating

JOURNAL OF ALLOYS COMPOUNDS

PHUC HV, ILYASOV VV, HIEU NN, AMIN B, NGUYEN CV

Adsorption and magnetism of bilayer graphene on the MnO polar surface with oxygen vacancies in the interface: First principles study

SUPERLATTICES MICROSTRUCTURES

ILYASOV VV, ERSHOV IV, POPOVA IG, PHAM KD, NGUYEN CV

First-principles study of electronic properties of AB-stacked bilayer armchair graphene nanoribbons under out-plane strain

INDIAN JOURNAL OF PHYSICS

NGUYEN CV, HIEU NV, NHAN LC, PHUC HV, ILYASOV VV, HIEU NN

Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

SUPERLATTICES MICROSTRUCTURES

NGUYEN CV