国家/地区 France（7） Vietnam（2）
关键词 GRAPHENE（5） STRAIN（2）
出版物 APPLIED PHYSICS LET.（3） JOURNAL OF APPLIED .（2） NANOTECHNOLOGY（2）
出版时间 2014（3） 2015（3） 2013（2）
机构 UNIV PARIS 1.（4）
作者 NGUYEN HV（11）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced thermoelectric figure of merit in vertical graphene junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, NGUYEN MC, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Improved performance of graphene transistors by strain engineering

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, DOLLFUS P

Faraday rotation in magnetically biased graphene at microwave frequencies

APPLIED PHYSICS LETTERS

SOUNAS DL, SKULASON HS, NGUYEN HV, GUERMOUNE A, SIAJ M, SZKOPEK T, CALOZ C

Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, NGUYEN MC, NGUYEN HV, DOLLFUS P

110 GHz measurement of large-area graphene integrated in low-loss microwave structures

APPLIED PHYSICS LETTERS

SKULASON HS, NGUYEN HV, GUERMOUNE A, SRIDHARAN V, SIAJ M, CALOZ C, SZKOPEK T

Comment on "Orientation dependence of the optical spectra in graphene at high frequencies"

PHYSICAL REVIEW B

NGUYEN HV, NGUYEN VH

Strong negative differential conductance in strained graphene devices

JOURNAL OF APPLIED PHYSICS

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced Seebeck effect in graphene devices by strain and doping engineering

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

NGUYEN MC, NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P