国家/地区 France（7）
关键词 GRAPHENE（4） STRAIN（2）
出版物 JOURNAL OF APPLIED .（2） NANOTECHNOLOGY（2）
出版时间 2014（3） 2015（3）
机构 UNIV PARIS 1.（4）
作者 NGUYEN HV（7）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced thermoelectric figure of merit in vertical graphene junctions

APPLIED PHYSICS LETTERS

NGUYEN VH, NGUYEN MC, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Improved performance of graphene transistors by strain engineering

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, DOLLFUS P

Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures

JOURNAL OF APPLIED PHYSICS

NGUYEN VH, NGUYEN MC, NGUYEN HV, DOLLFUS P

Strong negative differential conductance in strained graphene devices

JOURNAL OF APPLIED PHYSICS

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced Seebeck effect in graphene devices by strain and doping engineering

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

NGUYEN MC, NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P