国家/地区 France（2）
关键词 STRAIN（3）
出版物
出版时间 2014（2）
机构
作者 NGUYEN VH（3）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Improved performance of graphene transistors by strain engineering

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, DOLLFUS P

Optical Hall effect in strained graphene

2D MATERIALS

NGUYEN VH, LHERBIER A, CHARLIER JC