国家/地区 China（2）
关键词
出版物
出版时间 2015（2）
机构 UNIV SCI TE.（2）
作者 NING HS（2）

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

SCIENTIFIC REPORTS

MAO LF, NING HS, HUO ZL, WANG JY

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors

NANOSCALE RESEARCH LETTERS

MAO LF, NING HS, LI XJ