国家/地区 China（3）
关键词 GAN（3）
出版物
出版时间
机构
作者 NING J（3）

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

ZHANG YC, SU K, GUO R, XU SR, CHEN DZ, ZHU JD, BAO WM, ZHANG JC, NING J, HAO Y

Remote Epitaxy and Exfoliation of GaN via Graphene

ACS APPLIED ELECTRONIC MATERIALS

HAN X, YU JD, LI ZH, WANG X, HAO ZB, LUO Y, SUN CZ, HAN YJ, XIONG B, WANG J, LI HT, ZHANG YT, DUAN B, NING J, WU HD, WANG L

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

SCIENCE CHINAMATERIALS

CHEN DN, NING J, WANG D, WANG BY, ZHAO JL, ZHANG JC, HAO Y