国家/地区
关键词
出版物
出版时间 2012（3）
机构
作者 NIQUET YM（3）

Gate-controllable negative differential conductance in graphene tunneling transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN VH, NIQUET YM, DOLLFUS P

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS NANO

MARCONCINI P, CRESTI A, TRIOZON F, FIORI G, BIEL B, NIQUET YM, MACUCCI M, ROCHE S

Transport properties of graphene containing structural defects

PHYSICAL REVIEW B

LHERBIER A, DUBOIS SMM, DECLERCK X, NIQUET YM, ROCHE S, CHARLIER JC