国家/地区 Korea（2）
关键词
出版物
出版时间 2014（2）
机构
作者 PARK BG（2）

Pulsed I-V measurement method to obtain hysteresis-free characteristics of graphene FETs

SEMICONDUCTOR SCIENCE TECHNOLOGY

PARK JM, LEE D, SHIM J, JEON T, EOM K, PARK BG, LEE JH

Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

APPLIED PHYSICS LETTERS

BAEK SHC, SEO YJ, OH JG, PARK MGA, BONG JH, YOON SJ, SEO M, PARK SY, PARK BG, LEE SH