国家/地区 Usa（3）
关键词 RF ANALOG DEVICE（2）
出版物
出版时间 2013（3）
机构 UNIV TEXAS A.（3）
作者 PARRISH KN（3）

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

ACS NANO

LEE J, HA TJ, LI HF, PARRISH KN, HOLT M, DODABALAPUR A, RUOFF RS, AKINWANDE D

"Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers" (vol 99, 223512, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D