国家/地区
关键词 FIELDEFFECT TRANSISTOR（2）
出版物
出版时间
机构
作者 PASADAS F（2）

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

NANOTECHNOLOGY

FEIJOO PC, PASADAS F, IGLESIAS JM, MARTIN MJ, RENGEL R, LI CF, KIM W, RIIKONEN J, LIPSANEN H, JIMENEZ D

Graphene-on-Silicon Hybrid Field-Effect Transistors

ADVANCED ELECTRONIC MATERIALS

FOMIN M, PASADAS F, MARIN EG, MEDINARULL A, RUIZ FG, GODOY A, ZADOROZHNYI I, BELTRAMO G, BRINGS F, VITUSEVICH S, OFFENHAEUSSER A, KIREEV D