国家/地区 China（15）
关键词 CHARGE TRAP（2） GRAPHENE（2）
出版物 RSC ADVANCES（2）
出版时间 2016（4） 2015（3） 2017（2） 2018（2） 2020（2）
机构 CHINESE ACAD SCI（15）
作者 PENG SG（15）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

A composite with a gradient distribution of graphene and its anisotropic electromagnetic reflection

RSC ADVANCES

ZHANG DY, JIN Z, SHI JY, PENG SG, HUANG XN, YAO Y, LI YK, DING WC, WANG DH

Effects of carbon-based impurities on graphene growth

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

GE XM, ZHANG YH, CHEN ZY, LIANG YJ, HU SK, SUI YP, YU GH, PENG SG, JIN Z, LIU XY

Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

RSC ADVANCES

SUI YP, CHEN ZY, ZHANG YH, HU SK, LIANG YJ, GE XM, LI J, YU GH, PENG SG, JIN Z, LIU XY

The Anistropy of Field Effect Mobility of CVD Graphene Grown on Copper Foil

SMALL

ZHANG DY, JIN Z, SHI JY, MA P, PENG SG, LIU XY, YE TC

Depressed scattering across grain boundaries in single crystal graphene

APPLIED PHYSICS LETTERS

CHEN J, JIN Z, MA P, WANG H, WANG HM, SHI JY, PENG SG, LIU XY, YE TC

Evidence of electric field-tunable tunneling probability in graphene and metal contact

NANOSCALE

PENG SG, JIN Z, ZHANG DY, SHI JY, ZHANG YH, YU GH

Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

ACS APPLIED MATERIALS INTERFACES

PENG SG, JIN Z, ZHANG DY, SHI JY, MAO DC, WANG SQ, YU GH

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY