国家/地区 Iran（3）
关键词
出版物 APPLIED PHYSICS AMA.（2）
出版时间 2020（2）
机构 ISLAMIC AZAD.（3）
作者 POLIKI M（3）

Graphene rotational switch through vacancy defect and nitrogen doping

MICRO NANO LETTERS

POLIKI M, GOLZANI M, HAJINASIRI S

The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

GOLZANI M, POLIKI M, HAJINASIRI S

Electronic and transport characteristics of vacancy and nitrogen-doped graphene nanoribbon rotational switch

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

POLIKI M, HAJINASIRI S