国家/地区 Ukraine（11）
关键词 GRAPHENE（3） DEFECT（2） DENSITY OF STATE（2）
STRAIN（2）
出版物 METALLOFIZIKA I NOV.（3） EUROPEAN PHYSICAL J.（2）
出版时间 2011（2） 2017（2） 2019（2）
机构 NAS UKRAINE（4） NATL ACAD SC.（2）
作者 PRYLUTSKYY YI（11）

Straintronics in graphene: Extra large electronic band gap induced by tensile and shear strains

JOURNAL OF APPLIED PHYSICS

SAHALIANOV IY, RADCHENKO TM, TATARENKO VA, CUNIBERTI G, PRYLUTSKYY YI

Defect-Pattern-Induced Fingerprints in the Electron Density of States of Strained Graphene Layers: Diffraction and Simulation Methods

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

RADCHENKO TM, TATARENKO VA, LIZUNOV VV, MOLODKIN VB, GOLENTUS IE, SAHALIANOV IY, PRYLUTSKYY YI

Magnetic field-, strain-, and disorder-induced responses in an energy spectrum of graphene

ANNALS OF PHYSICS

SAHALIANOV IY, RADCHENKO TM, TATARENKO VA, PRYLUTSKYY YI

Effects of nitrogen-doping configurations with vacancies on conductivity in graphene

PHYSICS LETTERS A

RADCHENKO TM, TATARENKO VA, SAGALIANOV IY, PRYLUTSKYY YI

Influence of impurity defects on vibrational and electronic structure of graphene

MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK

SAGALIANOV IY, PRYLUTSKYY YI, TATARENKO VA, RADCHENKO TM, SUDAKOV OO, RITTER U, SCHARFF P, LE NORMAND F

Energies of Graphene-Based Substitutional Structures with Impurities of Nitrogen or Boron Atoms

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII

SAGALYANOV IY, PRYLUTSKYY YI, RADCHENKO TM, TATARENKO VA

Conductivity of the Graphene Layer Doped with Nitrogen or Boron Atoms, Depending on Their Concentration and Type of a Lattice Substitution

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII

SAGALYANOV IY, PRYLUTSKYY YI, SUDAKOV OO, TATARENKO VA

Structure and Thermal Stability of the Two-Layer Graphene Intercalated by Iron

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII

MYKHAILENKO OV, MATSUY DV, PRYLUTSKYY YI, MATZUI LY, UVAROU VM

Mutual influence of uniaxial tensile strain and point defect pattern on electronic states in graphene (vol 90, pg 112, 2017)

EUROPEAN PHYSICAL JOURNAL B

SAGALIANOV IY, RADCHENKO TM, PRYLUTSKYY YI, TATARENKO VA, SZROEDER P

Mutual influence of uniaxial tensile strain and point defect pattern on electronic states in graphene

EUROPEAN PHYSICAL JOURNAL B

SAGALIANOV IY, RADCHENKO TM, PRYLUTSKYY YI, TATARENKO VA, SZROEDER P