国家/地区 Usa（4）
关键词
出版物
出版时间 2014（2） 2016（2）
机构 UNIV TEXAS AUSTIN（4）
作者 RAHIMI S（4）

Toward 300 mm Wafer-Scalable High-Performance Polycrystalline Chemical Vapor Deposited Graphene Transistors

ACS NANO

RAHIMI S, TAO L, CHOWDHURY SF, PARK S, JOUVRAY A, BUTTRESS S, RUPESINGHE N, TEO K, AKINWANDE D

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

Extremely High-Frequency Flexible Graphene Thin-Film Transistors

IEEE ELECTRON DEVICE LETTERS

PARK S, SHIN SH, YOGEESH MN, LEE AL, RAHIMI S, AKINWANDE D

Clean graphene interfaces by selective dry transfer for large area silicon integration

NANOSCALE

NA SR, RAHIMI S, TAO L, CHOU H, AMERI SK, AKINWANDE D, LIECHTI KM