国家/地区 China（5）
关键词 SCHOTTKY BARRIER（3） FIRSTPRINCIPLE（2） GRAPHENE（2）
HETEROSTRUCTURE（2） VERTICAL STRAIN（2）
出版物 VACUUM（2）
出版时间 2021（3） 2022（2）
机构
作者 REN JQ（5）

Research on the electronic properties of graphene/beta-Si3N4 (0001) heterojunction

VACUUM

CUI ZH, LU XF, LUO JH, GUO X, REN JQ, XUE HT, TANG FL

First-principles investigation on Schottky barrier modification of graphene/CdSe heterojunction by the interlayer distance

CHEMICAL PHYSICS

YIN JT, LI LX, GUO X, REN JQ, LU XF

Turning electronic performance and Schottky barrier of graphene/beta-Si3N4 (0001) heterostructure by external strain and electric field

VACUUM

LU XF, LI LX, LUO JH, GUO X, REN JQ, XUE HT, LI H

The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain

MATERIALS SCIENCE ENGINEERING BADVANCED FUNCTIONAL SOLIDSTATE MATERIALS

LU XF, LI LX, GUO X, REN JQ, XUE HT, TANG FL

Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure

COMPUTATIONAL MATERIALS SCIENCE

LU XF, LI LX, GUO X, REN JQ, XUE HT, TANG FL