国家/地区 Malaysia（2）
关键词
出版物
出版时间 2013（3）
机构
作者 SADEGHI H（3）

Bilayer Graphene Nanoribbon Mobility Model in Ballistic Transport Limit

JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE

MOUSAVI SM, AHMADI MT, SADEGHI H, NILGHAZ A, KIANI MJ, ISMAIL R

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORIAN M, MANAF AABD, KARIMI H, SADEGHI H

Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

JOURNAL OF NANOMATERIALS

SADEGHI H, LAI DTH, REDOUTE JM, ZAYEGH A