国家/地区 England（6）
关键词 GRAPHENE（5） ATOMIC LAYER DEPOSI.（3）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2016（3） 2017（2）
机构 UNIV CAMBRID.（5）
作者 SAGADE AA（6）

Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

ACS APPLIED MATERIALS INTERFACES

LEE S, NATHAN A, ALEXANDERWEBBER J, BRAEUNINGERWEIMER P, SAGADE AA, LU HC, HASKO D, ROBERTSON J, HOFMANN S

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NANOTECHNOLOGY

CABREROVILATELA A, ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, BRAEUNINGERWEIMER P, MARTIN MB, WEATHERUP RS, HOFMANN S

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

2D MATERIALS

ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, VAN VELDHOVEN ZA, BRAEUNINGERWEIMER P, WANG RZ, CABREROVILATELA A, MARTIN MB, SUI JG, CONNOLLY MR, HOFMANN S

Electronic properties of CVD graphene: The role of grain boundaries, atmospheric doping, and encapsulation by ALD

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

VAN VELDHOVEN ZA, ALEXANDERWEBBER JA, SAGADE AA, BRAEUNINGERWEIMER P, HOFMANN S

Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene

ACS APPLIED MATERIALS INTERFACES

ARIA AI, NAKANISHI K, XIAO L, BRAEUNINGERWEIMER P, SAGADE AA, ALEXANDERWEBBER JA, HOFMANN S

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

SENSORS

WILLIAMS JOD, ALEXANDERWEBBER JA, LAPINGTON JS, ROY M, HUTCHINSON IB, SAGADE AA, MARTIN MB, BRAEUNINGERWEIMER P, CABREROVILATELA A, WANG RZ, DE LUCA A, UDREA F, HOFMANN S