国家/地区 Japan（11）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（11）
出版时间 2013（3） 2008（2） 2009（2） 2014（2）
机构 UNIV AIZU（6） TOHOKU UNIV（5）
作者 SATOU A（11）

Graphene vertical hot-electron terahertz detectors

JOURNAL OF APPLIED PHYSICS

RYZHII V, SATOU A, OTSUJI T, RYZHII M, MITIN V, SHUR MS

Damping mechanism of terahertz plasmons in graphene on heavily doped substrate

JOURNAL OF APPLIED PHYSICS

SATOU A, KOSEKI Y, RYZHII V, VYURKOV V, OTSUJI T

Double injection in graphene p-i-n structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, SEMENIKHIN I, RYZHII M, SVINTSOV D, VYURKOV V, SATOU A, OTSUJI T

Terahertz photomixing using plasma resonances in double-graphene layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, MITIN V, SHUR MS, SATOU A, OTSUJI T

Threshold of terahertz population inversion and negative dynamic conductivity in graphene under pulse photoexcitation

JOURNAL OF APPLIED PHYSICS

SATOU A, RYZHII V, KURITA Y, OTSUJI T

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, MITIN V

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, DUBINOV AA, ALESHKIN VY

Device model for graphene bilayer field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T, KIROVA N

High-frequency properties of a graphene nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII M, SATOU A, RYZHII V, OTSUJI T

Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T