国家/地区 England（6）
关键词 GRAPHENE（4） DOPING（3） EELS（3）
STEM（3） DFT（2） ELECTRONIC STRUCTUR.（2）
出版物 ACS NANO（2）
出版时间 2013（2）
机构 SUPERSTEM LA.（4）
作者 SEABOURNE CR（6）

Local Plasmon Engineering in Doped Graphene

ACS NANO

HAGE FS, HARDCASTLE TP, GJERDING MN, KEPAPTSOGLOU DM, SEABOURNE CR, WINTHER KT, ZAN R, AMANI JA, HOFSAESS HC, BANGERT U, THYGESEN KS, RAMASSE QM

Dielectric response of pentagonal defects in multilayer graphene nano-cones

NANOSCALE

HAGE FS, KEPAPTSOGLOU DM, SEABOURNE CR, RAMASSE QM, SCOTT AJ, PRYTZ O, GUNNAES AE, HELGESEN G

Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy

NANO LETTERS

RAMASSE QM, SEABOURNE CR, KEPAPTSOGLOU DM, ZAN R, BANGERT U, SCOTT AJ

Mobile metal adatoms on single layer, bilayer, and trilayer graphene: An ab initio DFT study with van der Waals corrections correlated with electron microscopy data

PHYSICAL REVIEW B

HARDCASTLE TP, SEABOURNE CR, ZAN R, BRYDSON RMD, BANGERT U, RAMASSE QM, NOVOSELOV KS, SCOTT AJ

Robust theoretical modelling of core ionisation edges for quantitative electron energy loss spectroscopy of B- and N-doped graphene

JOURNAL OF PHYSICSCONDENSED MATTER

HARDCASTLE TP, SEABOURNE CR, KEPAPTSOGLOU DM, SUSI T, NICHOLLS RJ, BRYDSON RMD, SCOTT AJ, RAMASSE QM

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

ACS NANO

KEPAPTSOGLOU D, HARDCASTLE TP, SEABOURNE CR, BANGERT U, ZAN R, AMANI JA, HOFSASS H, NICHOLLS RJ, BRYDSON RMD, SCOTT AJ, RAMASSE QM