国家/地区 Germany（5）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2016（6）
机构
作者 SEYLLER T（6）

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

2D MATERIALS

KRUSKOPF M, PAKDEHI DM, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, GOTZ M, BARINGHAUS J, APROJANZ J, TEGENKAMP C, LIDZBA J, SEYLLER T, HOHLS F, AHLERS FJ, SCHUMACHER HW

Manifestation of nonlocal electron-electron interaction in graphene

PHYSICAL REVIEW B

ULSTRUP S, SCHULER M, BIANCHI M, FROMM F, RAIDEL C, SEYLLER T, WEHLING T, HOFMANN P

Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

JOURNAL OF APPLIED PHYSICS

WOFFORD JM, SPECK F, SEYLLER T, LOPES JMJ, RIECHERT H

Rashba splitting of 100meV in Au-intercalated graphene on SiC

APPLIED PHYSICS LETTERS

MARCHENKO D, VARYKHALOV A, SANCHEZBARRIGA J, SEYLLER T, RADER O

Robust Phonon-Plasmon Coupling in Quasifreestanding Graphene on Silicon Carbide

PHYSICAL REVIEW LETTERS

KOCH RJ, FRYSKA S, OSTLER M, ENDLICH M, SPECK F, HANSEL T, SCHAEFER JA, SEYLLER T

Terahertz ratchet effects in graphene with a lateral superlattice

PHYSICAL REVIEW B

OLBRICH P, KAMANN J, KONIG M, MUNZERT J, TUTSCH L, EROMS J, WEISS D, LIU MH, GOLUB LE, IVCHENKO EL, POPOV VV, FATEEV DV, MASHINSKY KV, FROMM F, SEYLLER T, GANICHEV SD