国家/地区
关键词 HEXAGONAL BORON NITRIDE（2）
出版物
出版时间
机构
作者 SHI YY（2）

Graphene-Boron Nitride-Graphene Cross-Point Memristors with Three Stable Resistive States

ACS APPLIED MATERIALS INTERFACES

ZHU KC, LIANG XH, YUAN B, VILLENA MA, WEN C, WANG T, CHEN SC, HUI F, SHI YY, LANZA M

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

2D MATERIALS

PAN CB, MIRANDA E, VILLENA MA, XIAO N, JING X, XIE XM, WU TR, HUI F, SHI YY, LANZA M