国家/地区
关键词
出版物
出版时间 2016（2）
机构
作者 SHIM M（2）

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

NATURE COMMUNICATIONS

BAEUMER C, SCHMITZ C, MARCHEWKA A, MUELLER DN, VALENTA R, HACKL J, RAAB N, ROGERS SP, KHAN MI, NEMSAK S, SHIM M, MENZEL S, SCHNEIDER CM, WASER R, DITTMANN R

Single gate p-n junctions in graphene-ferroelectric devices

APPLIED PHYSICS LETTERS

HINNEFELD JH, XU RJ, ROGERS S, PANDYA S, SHIM M, MARTIN LW, MASON N