国家/地区 India（6）
关键词 GRAPHENE（4） CONTACT RESISTANCE（3） METAL（2）
VACANCY（2）
出版物 IEEE TRANSACTIONS O.（3）
出版时间
机构 INDIAN INST .（3）
作者 SHRIVASTAVA M（6）

On the ESD Behavior of Large-Area CVD Graphene Transistors: Physical Insights and Technology Implications

IEEE TRANSACTIONS ON ELECTRON DEVICES

KRANTHI NK, MISHRA A, MEERSHA A, SHRIVASTAVA M

Observing non-equilibrium state of transport through graphene channel at the nano-second time-scale

APPLIED PHYSICS LETTERS

MISHRA A, MEERSHA A, RAGHAVAN S, SHRIVASTAVA M

Physical Insights on the Ambiguous Metal-Graphene Interface and Proposal for Improved Contact Resistance

IEEE TRANSACTIONS ON ELECTRON DEVICES

GHATGE M, SHRIVASTAVA M

Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

IEEE ELECTRON DEVICE LETTERS

MEERSHA A, KUMAR J, MISHRA A, VARIAR HB, SHRIVASTAVA M

Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

KUMAR J, MEERSHA A, VARIAR HB, MISHRA A, SHRIVASTAVA M

Introduction of Near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight

ACS OMEGA

KUMAR J, ANSH, SHRIVASTAVA M