国家/地区 Usa（4）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2012（4）
机构 CORNELL UNIV（3）
作者 SPENCER MG（4）

Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer

NANOTECHNOLOGY

KIM M, HWANG J, LEPAK LA, LEE JW, SPENCER MG, TIWARI S

Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide

APPLIED PHYSICS LETTERS

SHIVARAMAN S, HERMAN LH, RANA F, PARK J, SPENCER MG

SiC surface orientation and Si loss rate effects on epitaxial graphene

NANOSCALE RESEARCH LETTERS

KIM M, HWANG J, SHIELDS VB, TIWARI S, SPENCER MG, LEE JW

Correlated conductivity and work function changes in epitaxial graphene

APPLIED PHYSICS LETTERS

NOMANI MWK, SHIELDS V, TOMPA G, SBROCKEY N, SPENCER MG, WEBB RA, KOLEY G