国家/地区 China（4）
关键词 VAN DER WAALS EPITAXY（4）
出版物 JOURNAL OF ALLOYS C.（2）
出版时间 2021（2）
机构 TSINGHUA UNI.（2）
作者 SUN CZ（4）

Influence of nitridation on III-nitride films grown on graphene/quartz substrates by plasma-assisted molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

YU JD, HAO ZB, DENG J, YU WY, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Study on AlN buffer layer for GaN on graphene/copper sheet grown by MBE at low growth temperature

JOURNAL OF ALLOYS COMPOUNDS

YU JD, HAO ZB, WANG J, DENG J, YU WY, WANG L, LUO Y, HAN YJ, SUN CZ, XIONG B, LI HT

First-principle calculations of adsorption of Ga (Al, N) adatoms on the graphene for the van-der-Waals epitaxy

MATERIALS TODAY COMMUNICATIONS

YU JD, HAO ZB, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Low-temperaturevan der waals epitaxy of GaN films on graphene through AlN buffer by plasma-assisted molecular beam epitaxy

JOURNAL OF ALLOYS COMPOUNDS

YU JD, HAO ZB, DENG J, LI X, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT