国家/地区 China（5）
关键词 FIRSTPRINCIPLE（2） GRAPHENE（2）
出版物
出版时间 2011（5）
机构 HENAN NORMAL.（5）
作者 TANG YN（5）

Trapping of metal atoms in the defects on graphene

JOURNAL OF CHEMICAL PHYSICS

TANG YN, YANG ZX, DAI XQ

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

CHINESE PHYSICS B

DAI XQ, TANG YN, DAI YW, LI YH, ZHAO JH, ZHAO B, YANG ZX

First-principle study of magnetism induced by vacancies in graphene

EUROPEAN PHYSICAL JOURNAL B

DAI XQ, ZHAO JH, XIE MH, TANG YN, LI YH, ZHAO B

Effects of Vacancy and Boron Doping on Si Adsorption on Graphene

ACTA PHYSICOCHIMICA SINICA

DAI XQ, LI YH, ZHAO JH, TANG YN

Metal Adatoms Induced Stability, Electronic and Magnetic Behaviors on Graphene

INTEGRATED FERROELECTRICS

TANG YN, DAI YW, ZHAO B, DAI XQ, YANG ZX