国家/地区
关键词
出版物
出版时间 2014（2）
机构
作者 THEMLIN JM（2）

Nitrogen-doping processes of graphene by a versatile plasma-based method

CARBON

LIN YP, KSARI Y, PRAKASH J, GIOVANELLI L, VALMALETTE JC, THEMLIN JM

Deuterium adsorption on (and desorption from) SiC(0001)-(3 x 3), (root 3 x root 3) R30 degrees, (6 root 3 x 6 root 3) R30 degrees and quasi-free-standing graphene obtained by hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BOCQUET FC, BISSON R, THEMLIN JM, LAYET JM, ANGOT T