国家/地区 China（7）
关键词
出版物
出版时间 2012（3） 2015（2）
机构 CITY UNIV HO.（5）
作者 VAN HOVE MA（7）

Symmetry-dependent band gap opening in graphene induced by g-C3N4 substrates

RSC ADVANCES

REN JC, ZHANG RQ, DING ZJ, VAN HOVE MA

Inducing extended line defects in graphene by linear adsorption of C and N atoms

APPLIED PHYSICS LETTERS

LI Y, ZHANG RQ, LIN ZJ, VAN HOVE MA

Atomic nitrogen chemisorption on graphene with extended line defects

JOURNAL OF MATERIALS CHEMISTRY

LI Y, REN JC, ZHANG RQ, LIN ZJ, VAN HOVE MA

Energetics and dynamics of a new type of extended line defects in graphene

NANOSCALE

LI Y, ZHANG RQ, LIN ZJ, VAN HOVE MA

Stacking of polycyclic aromatic hydrocarbons as prototype for graphene multilayers, studied using density functional theory augmented with a dispersion term

JOURNAL OF CHEMICAL PHYSICS

FENG C, LIN CS, FAN W, ZHANG RQ, VAN HOVE MA

Self-doping and magnetic ordering induced by extended line defects in graphene

PHYSICAL REVIEW B

REN JC, DING ZJ, ZHANG RQ, VAN HOVE MA

Enhancement of spin polarization induced by Coulomb on-site repulsion between localized p(z) electrons in graphene embedded with line defects

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

REN JC, WANG ZG, ZHANG RQ, DING ZJ, VAN HOVE MA