国家/地区 Sweden（4）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2022（4）
机构
作者 VOROBIEV A（4）

Graphene FET on Diamond for High-Frequency Electronics

IEEE ELECTRON DEVICE LETTERS

ASAD M, MAJDI S, VOROBIEV A, JEPPSON K, ISBERG J, STAKE J

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors

APPLIED PHYSICS LETTERS

RODRIGUES IH, GENERALOV A, SOIKKELI M, MURROS A, ARPIAINEN S, VOROBIEV A

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

JOURNAL OF APPLIED PHYSICS

RODRIGUES IH, RORSMAN N, VOROBIEV A

Geometrical magnetoresistance effect and mobility in graphene field-effect transistors (Sep, 10.1063/5.0123667, 2022)

APPLIED PHYSICS LETTERS

RODRIGUES IH, GENERALOV A, HOQUE AM, SOIKKELI M, MURROS A, ARPIAINEN S, VOROBIEV A