| 国家/地区 | China(2) |
| 关键词 |
GRAPHENE(2)
|
| 出版物 | |
| 出版时间 | |
| 机构 | |
| 作者 |
WAN ZY(2)
|
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates
IEEE TRANSACTIONS ON ELECTRON DEVICES
ZHOU GN, WAN ZY, YANG GY, JIANG Y, SOKOLOVSKIJ R, YU HY, XIA GR
MATERIALS LETTERS
CHEN JW, LIU R, ZHU LX, CHEN WW, DONG C, WAN ZY, CAO WB, ZHANG XQ, PENG RX, WANG MT
