国家/地区 England（14） Germany（2）
关键词 GRAPHENE（9） TEM（8） DEFECT（4）
2D（2） DISLOCATION（2） HRTEM（2）
出版物 ACS NANO（9） JOURNAL OF APPLIED .（2） NANOSCALE（2）
出版时间 2015（19）
机构 UNIV OXFORD（14）
作者 WARNER JH（19）

Characterization of Graphene and Transition Metal Dichalcogenide at the Atomic Scale

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

LIU Z, LIN YC, WARNER JH, TENG PY, YEH CH, CHIU PW, IIJIMA S, SUENGA K

Atomic Structure of Graphene Subnanometer Pores

ACS NANO

ROBERTSON AW, LEE GD, HE K, GONG CC, CHEN Q, YOON E, KIRKLAND AI, WARNER JH

In Situ Observations of Free-Standing Graphene-like Mono- and Bilayer ZnO Membranes

ACS NANO

QUANG HT, BACHMATIUK A, DIANAT A, ORTMANN F, ZHAO J, WARNER JH, ECKERT J, CUNNIBERTI G, RUMMELI MH

Temperature dependence of atomic vibrations in mono-layer graphene (vol 118, 074302, 2015)

JOURNAL OF APPLIED PHYSICS

ALLEN CS, LIBERTI E, KIM JS, XU Q, FAN Y, HE K, ROBERTSON AW, ZANDBERGEN HW, WARNER JH, KIRKLAND AI

Measuring strain and rotation fields at the dislocation core in graphene

PHYSICAL REVIEW B

BONILLA LL, CARPIO A, GONG C, WARNER JH

Uniformity of large-area bilayer graphene grown by chemical vapor deposition

NANOTECHNOLOGY

SHENG YW, RONG YM, HE ZY, FAN Y, WARNER JH

Rotating Anisotropic Crystalline Silicon Nanoclusters in Graphene

ACS NANO

CHEN Q, KOH AL, ROBERTSON AW, HE K, LEE S, YOON E, LEE GD, SINCLAIR R, WARNER JH

Thermally Induced Dynamics of Dislocations in Graphene at Atomic Resolution

ACS NANO

GONG CC, ROBERTSON AW, HE K, LEE GD, YOON E, ALLEN CS, KIRKLAND AI, WARNER JH

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

APPLIED PHYSICS LETTERS

PUCZKARSKI P, GEHRING P, LAU CS, LIU JJ, ARDAVAN A, WARNER JH, BRIGGS GAD, MOL JA

Formation of Klein Edge Doublets from Graphene NIonolayers

ACS NANO

KIM JS, WARNER JH, ROBERTSON AW, KIRKLAND AI