国家/地区 China（2）
关键词
出版物
出版时间
机构 NUPT（2）
作者 XIE LH（2）

Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes

JOURNAL OF APPLIED PHYSICS

YI MD, ZHAO LT, FAN QL, XIA XH, AI W, XIE LH, LIU XM, SHI NE, WANG WJ, WANG YP, HUANG W

Controllable Multiple Depression in a Graphene Oxide Artificial Synapse

ADVANCED ELECTRONIC MATERIALS

WANG LY, WANG ZY, ZHAO W, HU B, XIE LH, YI MD, LING HF, ZHANG CX, CHEN Y, LIN JY, ZHU JL, HUANG W