国家/地区 Japan（2）
关键词
出版物 APPLIED PHYSICS EXPRESS（2）
出版时间
机构
作者 YOKOYAMA N（2）

Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

APPLIED PHYSICS EXPRESS

NAKAHARAI S, IIJIMA T, OGAWA S, MIYAZAKI H, LI S, TSUKAGOSHI K, SATO S, YOKOYAMA N

Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes

APPLIED PHYSICS EXPRESS

KONDO D, SATO S, YAGI K, HARADA N, SATO M, NIHEI M, YOKOYAMA N