国家/地区 China（7）
关键词 VAN DER WAALS EPITA.（4） GRAPHENE（2） GRAPHENE INSERTION .（2）
IIINITRIDE（2） MIGRATION ENHANCED .（2） MOLECULAR BEAM EPIT.（2）
出版物 JOURNAL OF ALLOYS C.（2）
出版时间 2021（4）
机构 TSINGHUA UNI.（2）
作者 YU JD（7）

Influence of nitridation on III-nitride films grown on graphene/quartz substrates by plasma-assisted molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

YU JD, HAO ZB, DENG J, YU WY, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Study on AlN buffer layer for GaN on graphene/copper sheet grown by MBE at low growth temperature

JOURNAL OF ALLOYS COMPOUNDS

YU JD, HAO ZB, WANG J, DENG J, YU WY, WANG L, LUO Y, HAN YJ, SUN CZ, XIONG B, LI HT

Remote Epitaxy and Exfoliation of GaN via Graphene

ACS APPLIED ELECTRONIC MATERIALS

HAN X, YU JD, LI ZH, WANG X, HAO ZB, LUO Y, SUN CZ, HAN YJ, XIONG B, WANG J, LI HT, ZHANG YT, DUAN B, NING J, WU HD, WANG L

Van der Waals coherent epitaxy of GaN and InGaN/GaN multi-quantum-well via a graphene inserted layer

OPTICAL MATERIALS EXPRESS

YU JD, WANG L, HAN X, HAO ZB, LUO Y, SUN CZ, HAN YJ, XIONG B, WANG J, LI HT

High-value utilization of graphite electrodes in spent lithium-ion batteries: From 3D waste graphite to 2D graphene oxide

JOURNAL OF HAZARDOUS MATERIALS

YU JD, LIN MS, TAN QY, LI JH

First-principle calculations of adsorption of Ga (Al, N) adatoms on the graphene for the van-der-Waals epitaxy

MATERIALS TODAY COMMUNICATIONS

YU JD, HAO ZB, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Low-temperaturevan der waals epitaxy of GaN films on graphene through AlN buffer by plasma-assisted molecular beam epitaxy

JOURNAL OF ALLOYS COMPOUNDS

YU JD, HAO ZB, DENG J, LI X, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT