国家/地区 Korea（3）
关键词
出版物 CARBON（2）
出版时间 2015（2）
机构 HANYANG UNIV（3）
作者 YUN DY（3）

Enhancement of memory margins for stable organic bistable devices based on graphene-oxide layers due to embedded CuInS2 quantum dots

CARBON

YUN DY, PARK HM, KIM SW, KIM SW, KIM TW

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

ORGANIC ELECTRONICS

KIM YN, LEE NH, YUN DY, KIM TW

Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics

CARBON

YUN DY, KIM TW