国家/地区 Korea（2）
关键词
出版物
出版时间 2015（2）
机构 HANYANG UNIV（2）
作者 YUN DY（2）

Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

ORGANIC ELECTRONICS

KIM YN, LEE NH, YUN DY, KIM TW

Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics

CARBON

YUN DY, KIM TW