国家/地区 Sweden（4） Germany（3）
关键词
出版物 APPLIED PHYSICS LETTERS（8）
出版时间 2013（2） 2014（2）
机构 MAX PLANCK I.（3） LINKOPING UN.（2） UPPSALA UNIV（2）
作者 ZAKHAROV AA（8）

Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

APPLIED PHYSICS LETTERS

WEBB MJ, POLLEY C, DIRSCHERL K, BURWELL G, PALMGREN P, NIU YR, LUNDSTEDT A, ZAKHAROV AA, GUY OJ, BALASUBRAMANIAN T, YAKIMOVA R, GRENNBERG H

Bipolar gating of epitaxial graphene by intercalation of Ge

APPLIED PHYSICS LETTERS

BARINGHAUS J, STOHR A, FORTI S, KRASNIKOV SA, ZAKHAROV AA, STARKE U, TEGENKAMP C

Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

APPLIED PHYSICS LETTERS

DARAKCHIEVA V, BOOSALIS A, ZAKHAROV AA, HOFMANN T, SCHUBERT M, TIWALD TE, IAKIMOV T, VASILIAUSKAS R, YAKIMOVA R

Hole doping of graphene supported on Ir(111) by AlBr3

APPLIED PHYSICS LETTERS

VINOGRADOV NA, SIMONOV KA, ZAKHAROV AA, WELLS JW, GENERALOV AV, VINOGRADOV AS, MARTENSSON N, PREOBRAJENSKI AB

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

APPLIED PHYSICS LETTERS

COLETTI C, EMTSEV KV, ZAKHAROV AA, OUISSE T, CHAUSSENDE D, STARKE U

Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

APPLIED PHYSICS LETTERS

RIEDL C, ZAKHAROV AA, STARKE U

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

APPLIED PHYSICS LETTERS

BOUHAFS C, STANISHEV V, ZAKHAROV AA, HOFMANN T, KUHNE P, IAKIMOV T, YAKIMOVA R, SCHUBERT M, DARAKCHIEVA V

Controlling the growth of epitaxial graphene on metalized diamond (111) surface

APPLIED PHYSICS LETTERS

COOIL SP, WELLS JW, HU D, NIU YR, ZAKHAROV AA, BIANCHI M, EVANS DA