国家/地区 Taiwan（14） China（9）
关键词 GRAPHENE（4） GRAPHENE OXIDE（3） DEFECT（2）
SI（2） SUPERCAPACITOR（2）
出版物 APPLIED PHYSICS LET.（6） APPLIED PHYSICS AMA.（3） FRONTIERS OF PHYSIC.（2）
PHYSICAL REVIEW B（2）
出版时间 2014（6） 2022（5） 2012（3） 2013（3） 2015（2） 2020（2） 2021（2）
机构 NATL CHANGHU.（14）
作者 ZENG JJ（26）

Mesoscopic electronic transport in twisted bilayer graphene

PHYSICAL REVIEW B

HAN YL, ZENG JJ, REN YF, DONG XL, REN W, QIAO ZH

Controllable depolymerization of lignin using carbocatalyst graphene oxide under mild conditions

FUEL

ZENG JJ, TONG ZH, BAO HX, CHEN NS, WANG F, WANG YG, XIAO DQ

Monolithic electrode integrated of ultrathin NiFeP on 3D strutted graphene for bifunctionally efficient overall water splitting

NANO ENERGY

LI RQ, WANG BL, GAO T, ZHANG R, XU CY, JIANG XF, ZENG JJ, BANDO Y, HU PF, LI YL, WANG XB

Cement-Induced Coagulation of Aqueous Graphene Oxide with Ultrahigh Capacity and High Rate Behavior

NANOMATERIALS

YUAN XY, NIU JW, ZENG JJ, JING QY

Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

APPLIED SURFACE SCIENCE

LIN YJ, ZENG JJ

Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

ZENG JJ, LIN YJ

Tuning the work function of graphene by nitrogen plasma treatment with different radio-frequency powers

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

MATERIALS CHEMISTRY PHYSICS

ZENG JJ, LIN YJ

Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

APPLIED PHYSICS LETTERS

ZENG JJ, LIN YJ

Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

THIN SOLID FILMS

LIN JH, ZENG JJ, LIN YJ