国家/地区 China（2）
关键词 SCHOTTKY BARRIER（3）
出版物
出版时间
机构
作者 ZHOU ZX（3）

Graphene/g-GeC bilayer heterostructure: Modulated electronic properties and interface contact via external vertical strains and electric fileds

CARBON

GAO X, SHEN YQ, MA YY, WU SY, ZHOU ZX

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

NANO LETTERS

CHUANG HJ, TAN XB, GHIMIRE NJ, PERERA MM, CHAMLAGAIN B, CHENG MMC, YAN JQ, MANDRUS D, TOMANEK D, ZHOU ZX

Schottky barrier modification of GaSSe/graphene heterojunctions based on density functional theory

JOURNAL OF PHYSICS DAPPLIED PHYSICS

LV LL, SHEN YQ, MA YY, GAO X, LIU JJ, WU SY, WANG XY, GONG DW, ZHOU ZX