国家/地区 Sweden（6）
关键词
出版物 CARBON（2）
出版时间 2015（2） 2017（2）
机构 CHALMERS UNI.（3） CHALMERS（2）
作者 ZIRATH H（6）

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

JOURNAL OF APPLIED PHYSICS

WINTERS M, HASSAN J, ZIRATH H, JANZEN E, RORSMAN N

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

IEEE MICROWAVE WIRELESS COMPONENTS LETTERS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, CIUK T, CIEPIELEWSKI P, ZIRATH H

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

SCIENTIFIC REPORTS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, ZIRATH H

Graphene FET Gigabit ON-OFF Keying Demodulator at 96 GHz

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, CIUK T, CIEPIELEWSKI P, ZIRATH H

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers

CARBON

HASSAN J, WINTERS M, IVANOV IG, HABIBPOUR O, ZIRATH H, RORSMAN N, JANZEN E

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

CARBON

WINTERS M, HABIBPOUR O, IVANOV IG, HASSAN J, JANZEN E, ZIRATH H, RORSMAN N