国家/地区
关键词 2（2）
出版物 ADVANCED ELECTRONIC.（2）
出版时间
机构
作者 TANIGUCHI T（2）

ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

ADVANCED ELECTRONIC MATERIALS

MUKHERJEE B, HAYAKAWA R, WATANABE K, TANIGUCHI T, NAKAHARAI S, WAKAYAMA Y

Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors

ADVANCED ELECTRONIC MATERIALS

RYU H, KIM DH, KWON J, PARK SK, LEE W, SEO H, WATANABE K, TANIGUCHI T, KIM S, ZANDE AM, SON J, LEE GH