国家/地区
关键词 ALGAN/GAN（2）
出版物 IEEE ELECTRON DEVICE LETTERS（2）
出版时间 2017（2）
机构
作者

Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure

IEEE ELECTRON DEVICE LETTERS

ROMERO MF, BOSCA A, PEDROS J, MARTINEZ J, FANDAN R, PALACIOS T, CALLE F

Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

IEEE ELECTRON DEVICE LETTERS

SHEN LY, ZHANG DL, CHENG XH, ZHENG L, XU DW, WANG Q, LI JJ, CAO D, YU YH